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Determination of total x-ray absorption coefficient using non-resonant x-ray emission

机译:使用非共振测定总X射线吸收系数   X射线发射

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摘要

An alternative measure of x-ray absorption spectroscopy (XAS) called inversepartial fluorescence yield (IPFY) has recently been developed that is both bulksensitive and free of saturation effects. Here we show that the angledependence of IPFY can provide a measure directly proportional to the totalx-ray absorption coefficient, $\mu(E)$. In contrast, fluorescence yield (FY)and electron yield (EY) spectra are offset and/or distorted from $\mu(E)$ by anunknown and difficult to measure amount. Moreover, our measurement candetermine $\mu(E)$ in absolute units with no free parameters by scaling to$\mu(E)$ at the non-resonant emission energy. We demonstrate this techniquewith measurements on NiO and NdGaO$_3$. Determining $\mu(E)$ across edge-stepsenables the use of XAS as a non-destructive measure of material composition. InNdGaO$_3$, we also demonstrate the utility of IPFY for insulating samples,where neither EY or FY provide reliable spectra due to sample charging andself-absorption effects, respectively.
机译:最近开发了一种替代的X射线吸收光谱法(XAS),称为反荧光产量(IPFY),该方法既具有体积敏感性,又没有饱和效应。在这里,我们表明IPFY的角度依赖性可以提供与总射线吸收系数$ \ mu(E)$成正比的度量。相比之下,荧光产量(FY)和电子产量(EY)光谱从$ \ mu(E)$中偏移和/或扭曲了一个未知且难以测量的量。此外,我们的测量可以通过将非共振发射能量缩放到$ \ mu(E)$来确定没有自由参数的绝对单位$ \ mu(E)$。我们通过对NiO和NdGaO $ _3 $的测量来演示此技术。跨边缘确定$ \ mu(E)$可以将XAS用作材料成分的非破坏性度量。在NdGaO $ _3 $中,我们还演示了IPFY用于绝缘样品的实用性,其中EY或FY分别由于样品的充电和自吸收效应而无法提供可靠的光谱。

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